https://www.st.com/resource/en/datasheet/3stl2540.pdf

ST Microelectronics has improved the power efficiency of bipolar junction transistor to be as good as MOSFET. ST Microelectronics has announced a bipolar junction PNP transistor coded 3STL2540 with rating of -40V/-5A capable of full saturation with maximum voltage drop of 200mV at only 10mA base current. It can achieve an equivalent on-resistance of on 90 milli ohms, which is close to the performance of comparable super logic-level MOSFETs.
ST has fabricated these transistors by using double-metal planar base island technology. 3STL2540 offer high current gain (hFE) of at least 100 over a wide output-voltage range from 0.2 to 10 V and a temperature range from -30°C to 150°C, offering the industry’s lowest conduction losses for this type of device, claims ST. The package is also thermally efficient, package called PowerFLAT measures 0.6mm high with a 2mm x 2mm footprint.
The 3STL2540 is in volume production, and available from $0.30 in the PowerFLAT 2x2 package for orders over 1,000 pieces.