Код:
*SRC=2SJ162;MSJ162;MOSFETs P;Power >100V;160V 7A
*SYM=POWMOSP
.SUBCKT 2SJ162 10 20 40
* TERMINALS: D G S
* Hitachi 160 Volt 7 Amp .171 ohm P-Channel Power MOSFET 08-06-1993
M1 1 2 3 3 DMOS L=1U W=1U
RD 100 1 110.4M
RS 30 3 25.28M
RG 20 2 17.4
CGS 2 3 760P
EGD 12 0 1 2 1
VFB 14 0 0
FFB 1 2 VFB 1
CGD 13 14 467P
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 100 3 DSUB
LS 30 40 7.5N
LD 10 100 4N
.MODEL DMOS PMOS (LEVEL=3 THETA=90M VMAX=183K ETA=6.5M VTO=-.2 KP=1.109)
.MODEL DCGD D (CJO=467P VJ=.6 M=.68)
.MODEL DSUB D (IS=29N N=1.5 RS=61.4M BV=160 CJO=900P VJ=.8 M=.42 TT=252N IBV=3.5m)
.MODEL DLIM D (IS=100U)
.ENDS
Код:
*SRC=2SK1058;MSK1058;MOSFETs N;Power >100V;160V 7A
*SYM=POWMOSN
.SUBCKT 2SK1058 10 20 40
* TERMINALS: D G S
* Hitachi 160 Volt 7 Amp .171 ohm N-Channel Power MOSFET 08-06-1993
M1 1 2 3 3 DMOS L=1U W=1U
RD 100 1 80.4M
RS 30 3 5.28M
RG 20 2 21.4
CGS 2 3 410P
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 128P
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 100 DSUB
LS 30 40 7.5N
LD 10 100 4N
.MODEL DMOS NMOS (LEVEL=3 THETA=85M VMAX=163K ETA=2.2M VTO=.2 KP=.999)
.MODEL DCGD D (CJO=128P VJ=.6 M=.68)
.MODEL DSUB D (IS=29N N=1.5 RS=60.M BV=160 CJO=802P VJ=.8 M=.42 TT=252N IBV=60m)
*.MODEL DSUB D (IS=29N N=1.5 RS=60.M BV=160 CJO=802P VJ=.8 M=.42 TT=252N IBV=60m IBV=70m)
.MODEL DLIM D (IS=100U)
.ENDS
Код:
*.MODEL 2SJ79 PMOS (VTO=322.944M KP=20U L=2U W=3.50594M GAMMA=0 PHI=600M
*+ LAMBDA=24.1203M RD=1.88227 IS=10F CGSO=1.65276N CGDO=1.65276N TOX=0 NSUB=0
*+ TPG=1 UO=600 RG=10 RDS=1MEG GDSNOI=0)
Код:
.MODEL 2SK216 NMOS (VTO=-56.0259M KP=20U L=2U W=10.3184M GAMMA=0 PHI=600M
+ LAMBDA=2.12826M CBD=1.80316N IS=10F CGSO=1.13517N CGDO=1.13517N TOX=0 NSUB=0
+ TPG=1 UO=600 RG=50 RDS=1MEG )
Социальные закладки